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Quantum simulations of electrostatics in Si cylindrical nanowire pinch-off nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations

Date

2011
Proceedings Paper
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dc.contributor.authorPham, Anton
dc.contributor.authorSoree, Bart
dc.contributor.authorMagnus, Wim
dc.contributor.authorJungemann, Christoph
dc.contributor.authorMeinerzhagen, Bernd
dc.contributor.authorPourtois, Geoffrey
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorMagnus, Wim
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.accessioned2021-10-19T17:18:50Z
dc.date.available2021-10-19T17:18:50Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19571
dc.source.conference12th International Conference on Ultimate Integration on Silicon - ULIS
dc.source.conferencedate14/03/2011
dc.source.conferencelocationCork Ireland
dc.title

Quantum simulations of electrostatics in Si cylindrical nanowire pinch-off nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations

dc.typeProceedings paper
dspace.entity.typePublication
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