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Radiation tolerance in HfSiON gate MOSFETs by high-energy Particles irradation

Date

2005
Presentation
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dc.contributor.authorHayama, K.
dc.contributor.authorTakakura, K.
dc.contributor.authorNishimura, A.
dc.contributor.authorOhyama, H.
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-16T01:55:00Z
dc.date.available2021-10-16T01:55:00Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10549
dc.source.conference24th Electronic Materials Symposium - EMS-24
dc.source.conferencedate4/07/2005
dc.source.conferencelocationEhime Japan
dc.title

Radiation tolerance in HfSiON gate MOSFETs by high-energy Particles irradation

dc.typeOral presentation
dspace.entity.typePublication
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