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Temperature dependence of the leakage current of advanced p-n junction diodes fabricated on different silicon substrates

Date

2001
Proceedings Paper
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dc.contributor.authorPoyai, Amporn
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-14T17:37:52Z
dc.date.available2021-10-14T17:37:52Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5587
dc.source.beginpage167
dc.source.conferenceProceedings of SAFE:4th Annual Workshop on Semiconductor Advances for Future Electronics
dc.source.conferencedate28/11/2001
dc.source.conferencelocationVeldhoven The Netherlands
dc.source.endpage173
dc.title

Temperature dependence of the leakage current of advanced p-n junction diodes fabricated on different silicon substrates

dc.typeProceedings paper
dspace.entity.typePublication
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