Publication:

Enhanced Ge photoluminescence by increasing the active P doping using high order Ge precursors at lower growth temperatures

Date

2015
Meeting abstract
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dc.contributor.authorShimura, Yosuke
dc.contributor.authorSrinivasan, Ashwyn
dc.contributor.authorVan Thourhout, Dries
dc.contributor.authorVan Deun, Rik
dc.contributor.authorPantouvaki, Marianna
dc.contributor.authorVan Campenhout, Joris
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorSrinivasan, Ashwyn
dc.contributor.imecauthorVan Thourhout, Dries
dc.contributor.imecauthorPantouvaki, Marianna
dc.contributor.imecauthorVan Campenhout, Joris
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-22T22:51:00Z
dc.date.available2021-10-22T22:51:00Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25903
dc.source.conferenceE-MRS Fall Meeting, Symposium O: Alternative Semiconductor Integration in Si Microelectronics: Materials, Techniques and ...
dc.source.conferencedate15/09/2015
dc.source.conferencelocationWarsaw Poland
dc.title

Enhanced Ge photoluminescence by increasing the active P doping using high order Ge precursors at lower growth temperatures

dc.typeMeeting abstract
dspace.entity.typePublication
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