Publication:
Low-temperature anneal of the divacancy in p-type silicon: a transformation from V2 to VxOy complexes
Date
| dc.contributor.author | Trauwaert, Marie-Astrid | |
| dc.contributor.author | Vanhellemont, Jan | |
| dc.contributor.author | Maes, Herman | |
| dc.contributor.author | Van Bavel, Mieke | |
| dc.contributor.author | Langouche, G. | |
| dc.contributor.author | Clauws, P. | |
| dc.contributor.imecauthor | Van Bavel, Mieke | |
| dc.date.accessioned | 2021-09-29T13:17:58Z | |
| dc.date.available | 2021-09-29T13:17:58Z | |
| dc.date.issued | 1995 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/916 | |
| dc.source.beginpage | 3057 | |
| dc.source.endpage | 8 | |
| dc.source.issue | 22 | |
| dc.source.journal | Applied Physics Letters | |
| dc.source.volume | 66 | |
| dc.title | Low-temperature anneal of the divacancy in p-type silicon: a transformation from V2 to VxOy complexes | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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