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Demonstration of a Free-layer Developed With Atomistic Simulations Enabling BEOL Compatible VCMA-MRAM with a Coefficient >= 100fJ/Vm

 
dc.contributor.authorCarpenter, Robert
dc.contributor.authorKim, Woojin
dc.contributor.authorSankaran, Kiroubanand
dc.contributor.authorAo, Nan
dc.contributor.authorBen Chroud, Mohamed
dc.contributor.authorKumar, A.
dc.contributor.authorTrovato, Anna
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorCouet, Sebastien
dc.contributor.authorKar, Gouri Sankar
dc.contributor.imecauthorCarpenter, Robert
dc.contributor.imecauthorKim, Woojin
dc.contributor.imecauthorSankaran, Kiroubanand
dc.contributor.imecauthorAo, Nan
dc.contributor.imecauthorBen Chroud, Mohamed
dc.contributor.imecauthorTrovato, Anna
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorCouet, Sebastien
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecCarpenter, Robert::0000-0003-0101-5952
dc.contributor.orcidimecKim, Woojin::0000-0002-2755-6661
dc.contributor.orcidimecSankaran, Kiroubanand::0000-0001-6988-7269
dc.contributor.orcidimecBen Chroud, Mohamed::0000-0003-3312-7342
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecCouet, Sebastien::0000-0001-6436-9593
dc.date.accessioned2022-08-25T13:53:34Z
dc.date.available2022-07-09T02:27:43Z
dc.date.available2022-08-25T13:53:34Z
dc.date.issued2021
dc.identifier.doi10.1109/IEDM19574.2021.9720579
dc.identifier.eisbn978-1-6654-2572-8
dc.identifier.issn2380-9248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40083
dc.publisherIEEE
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 11-16, 2021
dc.source.conferencelocationSan Francisco
dc.source.journalna
dc.source.numberofpages4
dc.title

Demonstration of a Free-layer Developed With Atomistic Simulations Enabling BEOL Compatible VCMA-MRAM with a Coefficient >= 100fJ/Vm

dc.typeProceedings paper
dspace.entity.typePublication
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