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Surface passivation and microroughness of (100) silicon etched in aqueous hydrogen halide (HF, HCl, HBr, Hl) solutions

Date

1995
Journal article
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dc.contributor.authorLi, Li
dc.contributor.authorBender, Hugo
dc.contributor.authorTrenkler, Thomas
dc.contributor.authorMertens, Paul
dc.contributor.authorMeuris, Marc
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-09-29T13:09:11Z
dc.date.available2021-09-29T13:09:11Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/722
dc.source.beginpage1323
dc.source.endpage5
dc.source.issue3
dc.source.journalJournal of Applied Physics
dc.source.volume77
dc.title

Surface passivation and microroughness of (100) silicon etched in aqueous hydrogen halide (HF, HCl, HBr, Hl) solutions

dc.typeJournal article
dspace.entity.typePublication
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