Publication:

Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

Date

2021-11-22
Journal article
https://doi.org/10.1063/5.0066681
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dc.contributor.authorWang, Hongyue
dc.contributor.authorWang, Jinyan
dc.contributor.authorHsu, Brent
dc.contributor.authorZhao, Ming
dc.contributor.authorSimoen, Eddy
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.imecauthorWang, Hongyue
dc.contributor.imecauthorHsu, Brent
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecHsu, Brent::0000-0003-0823-6088
dc.date.accessioned2022-05-02T08:07:50Z
dc.date.available2021-12-06T02:07:01Z
dc.date.available2022-03-24T09:43:29Z
dc.date.available2022-05-02T08:07:50Z
dc.date.embargo2023-05-31
dc.date.issued2021-11-22
dc.identifier.doi10.1063/5.0066681
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38568
dc.publisherAIP Publishing
dc.source.beginpage205701
dc.source.issue20
dc.source.journalJOURNAL OF APPLIED PHYSICS
dc.source.numberofpages7
dc.source.volume130
dc.subject.keywordsDEFECT STATES
dc.subject.keywordsTRAPS
dc.title

Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

dc.typeJournal article
dspace.entity.typePublication
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