Publication:

Refined Analysis of the Correlated Carrier Number and Mobility Fluctuations Mechanism in MOSFETs

Date

2024
Journal article
https://doi.org/10.1109/TED.2024.3445310
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dc.contributor.authorCretu, Bogdan
dc.contributor.authorTahiat, Abderrahim
dc.contributor.authorVeloso, Anabela
dc.contributor.authorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.date.accessioned2025-04-24T09:28:06Z
dc.date.available2024-09-22T17:21:45Z
dc.date.available2025-04-24T09:28:06Z
dc.date.issued2024
dc.identifier.doi10.1109/TED.2024.3445310
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44561
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage5860
dc.source.endpage5866
dc.source.issue10
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages7
dc.source.volume71
dc.subject.keywordsLOW-FREQUENCY NOISE
dc.subject.keywordsFLICKER NOISE
dc.subject.keywordsSERIES-RESISTANCE
dc.subject.keywords1/F NOISE
dc.subject.keywordsEXTRACTION
dc.subject.keywordsNMOSFETS
dc.subject.keywordsFINFET
dc.title

Refined Analysis of the Correlated Carrier Number and Mobility Fluctuations Mechanism in MOSFETs

dc.typeJournal article
dspace.entity.typePublication
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