Publication:

Use of bilayer gate insulator in GaN-on-Si vertical trench MOSFETs: Impact on performance and reliability

Date

2020
Journal article
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dc.contributor.authorMukherjee, Kalparupa
dc.contributor.authorDe Santi, Carlo
dc.contributor.authorBorga, Matteo
dc.contributor.authorYou, Shuzhen
dc.contributor.authorGeens, Karen
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.contributor.authorMeneghini, Matteo
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-29T01:08:37Z
dc.date.available2021-10-29T01:08:37Z
dc.date.issued2020
dc.identifier.issn1996-1944
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35622
dc.identifier.urlhttps://www.mdpi.com/1996-1944/13/21/4740
dc.source.beginpage4740
dc.source.issue21
dc.source.journalMaterials
dc.source.volume13
dc.title

Use of bilayer gate insulator in GaN-on-Si vertical trench MOSFETs: Impact on performance and reliability

dc.typeJournal article
dspace.entity.typePublication
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