Publication:
Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses
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| dc.contributor.author | Yang, Yi | |
| dc.contributor.author | Yu, Hao | |
| dc.contributor.author | Tsai, Meng-Che | |
| dc.contributor.author | Lin, Wei-Tung | |
| dc.contributor.author | Kuo, Ying-Chu | |
| dc.contributor.author | O'Sullivan, Barry | |
| dc.contributor.author | Rathi, Aarti | |
| dc.contributor.author | Gupta, Amratansh | |
| dc.contributor.author | Yadav, Sachin | |
| dc.contributor.author | Alian, AliReza | |
| dc.contributor.author | Peralagu, Uthayasankaran | |
| dc.contributor.author | Parvais, Bertrand | |
| dc.contributor.author | Collaert, Nadine | |
| dc.contributor.author | Wu, Tian-Li | |
| dc.date.accessioned | 2026-04-23T11:44:31Z | |
| dc.date.available | 2026-04-23T11:44:31Z | |
| dc.date.createdwos | 2025-10-18 | |
| dc.date.issued | 2025 | |
| dc.description.abstract | This study examines the stability of RF MIS-HEMTs under ON, SEMI-ON, and OFF-state pulses with in-situ SiN thicknesses scaled from 10nm to 1nm, compared to RF Schottky HEMTs. While stability is maintained under ON-state pulses, significant degradation is observed under SEMI-ON and OFFstate pulses, particularly in devices with a 1 nm in-situ SiN layer (M1). The high interface trap density (Nit) and inadequate passivation of the M1 sample contribute to the observed current degradation. EDX analysis suggests a rough interface in M1, likely due to non-uniform SiN growth or SiN/Al2O3 intermixing. | |
| dc.description.wosFundingText | This work was financially supported by the "Advanced Semiconductor Technology Research Center" from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. Also supported in part by the National Science and Technology Council (NSTC), Taiwan, under Grant 112-2628-E-A49-020-MY3 | |
| dc.identifier.doi | 10.1109/IRPS48204.2025.10983187 | |
| dc.identifier.isbn | 979-8-3315-0478-6 | |
| dc.identifier.issn | 1541-7026 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/59181 | |
| dc.language.iso | eng | |
| dc.provenance.editstepuser | greet.vanhoof@imec.be | |
| dc.publisher | IEEE | |
| dc.source.conference | IEEE International Reliability Physics Symposium (IRPS) | |
| dc.source.conferencedate | 2025-03-30 | |
| dc.source.conferencelocation | Monterey | |
| dc.source.journal | 2025 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS | |
| dc.source.numberofpages | 5 | |
| dc.title | Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
| imec.internal.crawledAt | 2025-10-22 | |
| imec.internal.source | crawler | |
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