Understanding oxide degradation mechanisms in ultra-thin SiO2 through high-speed, high-resolution in-situ measurements

dc.contributor.author	Aresu, S.
dc.contributor.author	De Ceuninck, Ward
dc.contributor.author	Degraeve, Robin
dc.contributor.author	Kaczer, Ben
dc.contributor.author	Knuyt, G.
dc.contributor.author	De Schepper, Luc
dc.contributor.imecauthor	De Ceuninck, Ward
dc.contributor.imecauthor	Degraeve, Robin
dc.contributor.imecauthor	Kaczer, Ben
dc.contributor.orcidimec	Kaczer, Ben::0000-0002-1484-4007
dc.date.accessioned	2021-10-16T00:42:50Z
dc.date.available	2021-10-16T00:42:50Z
dc.date.issued	2005
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/10021
dc.source.beginpage	182
dc.source.endpage	185
dc.source.journal	Microelectronic Engineering
dc.source.volume	80
dc.title	Understanding oxide degradation mechanisms in ultra-thin SiO2 through high-speed, high-resolution in-situ measurements
dc.type	Journal article
dspace.entity.type	Publication
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