Publication:

Si+ ion implantation for strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures

Date

2009
Journal article
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dc.contributor.authorBuca, Daniel
dc.contributor.authorMinamisawa, R.A.
dc.contributor.authorTrinkaus, H
dc.contributor.authorMantl, S
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-17T21:29:55Z
dc.date.available2021-10-17T21:29:55Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15057
dc.source.beginpage114905
dc.source.issue11
dc.source.journalJournal of Applied Physics
dc.source.volume105
dc.title

Si+ ion implantation for strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures

dc.typeJournal article
dspace.entity.typePublication
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