Publication:

Dynamic threshold voltage influence on Ge pMOSFET hysteresis

Date

2015
Proceedings Paper
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dc.contributor.authorOliveira, A. V.
dc.contributor.authorAgopian, P. G. D.
dc.contributor.authorMartino, A.
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorMitard, Jerome
dc.contributor.authorMertens, Hans
dc.contributor.authorMocuta, Anda
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-22T21:27:32Z
dc.date.available2021-10-22T21:27:32Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25703
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7298118
dc.source.beginpage1
dc.source.conference30th Symposium on Microelectronics Technology and Devices - SBMICRO
dc.source.conferencedate31/08/2015
dc.source.conferencelocationSalvado Bahia Brazil
dc.source.endpage4
dc.title

Dynamic threshold voltage influence on Ge pMOSFET hysteresis

dc.typeProceedings paper
dspace.entity.typePublication
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