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Selective patterning of amorphous silicon on MoS2 to fabricate transition-metal dichalcogenide heterostructures

Date

2017
Proceedings Paper
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dc.contributor.authorHeyne, Markus
dc.contributor.authorGoodyear, Andy
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorCooke, Mike
dc.contributor.authorRadu, Iuliana
dc.contributor.authorNeyts, Erik C.
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-24T05:44:06Z
dc.date.available2021-10-24T05:44:06Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28507
dc.identifier.urlhttp://phantomsfoundation.com/GRAPHENECONF/2017/Abstracts/Grapheneconf2017_Heyne_Markus_H._386.pdf
dc.source.conferenceGraphene 2017
dc.source.conferencedate28/03/2017
dc.source.conferencelocationBarcelona Spain
dc.title

Selective patterning of amorphous silicon on MoS2 to fabricate transition-metal dichalcogenide heterostructures

dc.typeProceedings paper
dspace.entity.typePublication
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