Publication:

High responsivity low-voltage 28Gb/s Ge p-i-n photodetector with silicon contacts

Date

2015
Journal article
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dc.contributor.authorChen, Hongtao
dc.contributor.authorVerheyen, Peter
dc.contributor.authorDe Heyn, Peter
dc.contributor.authorLepage, Guy
dc.contributor.authorDe Coster, Jeroen
dc.contributor.authorAbsil, Philippe
dc.contributor.authorRoelkens, Gunther
dc.contributor.authorVan Campenhout, Joris
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorDe Heyn, Peter
dc.contributor.imecauthorLepage, Guy
dc.contributor.imecauthorDe Coster, Jeroen
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorRoelkens, Gunther
dc.contributor.imecauthorVan Campenhout, Joris
dc.contributor.orcidimecDe Heyn, Peter::0000-0003-3523-7377
dc.contributor.orcidimecRoelkens, Gunther::0000-0002-4667-5092
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.date.accessioned2021-10-22T18:39:30Z
dc.date.available2021-10-22T18:39:30Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.issn0733-8724
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25058
dc.identifier.urlhttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6945832
dc.source.beginpage820
dc.source.endpage824
dc.source.issue4
dc.source.journalJournal of Lightwave Technology
dc.source.volume33
dc.title

High responsivity low-voltage 28Gb/s Ge p-i-n photodetector with silicon contacts

dc.typeJournal article
dspace.entity.typePublication
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