Boron doped selective silicon epitaxy: high efficiency and process simplification in IBC cells

dc.contributor.author	Recaman Payo, Maria
dc.contributor.author	Posthuma, Niels
dc.contributor.author	Uruena De Castro, Angel
dc.contributor.author	Debucquoy, Maarten
dc.contributor.author	Poortmans, Jef
dc.contributor.imecauthor	Recaman Payo, Maria
dc.contributor.imecauthor	Posthuma, Niels
dc.contributor.imecauthor	Debucquoy, Maarten
dc.contributor.imecauthor	Poortmans, Jef
dc.contributor.orcidimec	Posthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimec	Debucquoy, Maarten::0000-0001-5980-188X
dc.contributor.orcidimec	Poortmans, Jef::0000-0003-2077-2545
dc.date.accessioned	2021-10-21T11:20:33Z
dc.date.available	2021-10-21T11:20:33Z
dc.date.issued	2013
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/22988
dc.source.beginpage	941
dc.source.conference	28th European Photovoltaic Solar Energy Conference and Exhibition - EUPVSEC
dc.source.conferencedate	30/09/2013
dc.source.conferencelocation	Paris France
dc.source.endpage	946
dc.title	Boron doped selective silicon epitaxy: high efficiency and process simplification in IBC cells
dc.type	Proceedings paper
dspace.entity.type	Publication
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