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Low VT metal-gate/high-k nMOSFETs - PBTI dependence and VT tune-ability on La/Dy-capping layer locations and laser annealing conditions
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Low VT metal-gate/high-k nMOSFETs - PBTI dependence and VT tune-ability on La/Dy-capping layer locations and laser annealing conditions
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Date
2008
Proceedings Paper
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16046.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Chang, Shou-Zen
;
Hoffmann, Thomas Y.
;
Yu, HongYu
;
Aoulaiche, Marc
;
Rohr, Erika
;
Adelmann, Christoph
;
Kaczer, Ben
;
Delabie, Annelies
;
Favia, Paola
;
Van Elshocht, Sven
;
Kubicek, Stefan
;
Schram, Tom
;
Witters, Thomas
;
Ragnarsson, Lars-Ake
;
Wang, Xin Peng
;
Cho, Hag-Ju
;
Mueller, Markus
;
Chiarella, Thomas
;
Absil, Philippe
;
Biesemans, Serge
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Abstract
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1940
since deposited on 2021-10-17
Acq. date: 2026-01-09
Citations
Metrics
Views
1940
since deposited on 2021-10-17
Acq. date: 2026-01-09
Citations