Publication:

Metal-Contact Improvement in a Multilayer WSe2 Transistor through Strong Hot Carrier Injection

Date

2021
Journal article
https://doi.org/10.1021/acsami.0c18319
Simple item page Full metadata Statistics
 
dc.contributor.authorLee, Kookjin
dc.contributor.authorKim, Yeonsu
dc.contributor.authorKim, Doyoon
dc.contributor.authorLee, Jaewoo
dc.contributor.authorLee, Hyebin
dc.contributor.authorJoo, Min-Kyu
dc.contributor.authorCho, Young-Hoon
dc.contributor.authorShin, Jinwoo
dc.contributor.authorJi, Hyunjin
dc.contributor.authorKim, Gyu-Tae
dc.contributor.imecauthorLee, Kookjin
dc.contributor.orcidextJoo, Min-Kyu::0000-0001-7537-1015
dc.contributor.orcidimecLee, Kookjin::0000-0002-9896-1090
dc.date.accessioned2022-02-23T15:35:35Z
dc.date.available2022-02-23T15:35:35Z
dc.date.issued2021
dc.identifier.doi10.1021/acsami.0c18319
dc.identifier.issn1944-8244
dc.identifier.pmidMEDLINE:33410320
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39063
dc.publisherAMER CHEMICAL SOC
dc.source.beginpage2829
dc.source.endpage2835
dc.source.issue2
dc.source.journalACS APPLIED MATERIALS & INTERFACES
dc.source.numberofpages7
dc.source.volume13
dc.subject.keywordsFIELD-EFFECT TRANSISTORS
dc.subject.keywordsLOW-FREQUENCY NOISE
dc.subject.keywordsTRANSPORT-PROPERTIES
dc.subject.keywordsMOS2 TRANSISTORS
dc.subject.keywordsTHIN-LAYERS
dc.subject.keywordsLARGE-AREA
dc.subject.keywordsMONOLAYER
dc.subject.keywordsMONO
dc.title

Metal-Contact Improvement in a Multilayer WSe2 Transistor through Strong Hot Carrier Injection

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections:
Articles