Publication:

ESD nMOSFETs in Advanced Bulk FinFET Technology With Dual S/D Epitaxy

 
dc.contributor.authorChen, Wen-Chieh
dc.contributor.authorChen, Shih-Hung
dc.contributor.authorChiarella, Thomas
dc.contributor.authorHellings, Geert
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorChen, Wen-Chieh
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecChen, Wen-Chieh::0000-0002-1298-6693
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecChen, Shih-Hung::0000-0002-6481-2951
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.accessioned2023-08-07T11:42:15Z
dc.date.available2023-06-20T10:33:36Z
dc.date.available2023-08-07T11:42:15Z
dc.date.embargo9999-12-31
dc.date.issued2022
dc.identifier.doi10.1109/TED.2022.3190822
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41815
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage5357
dc.source.endpage5362
dc.source.issue9
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages6
dc.source.volume69
dc.subject.keywordsPERFORMANCE
dc.subject.keywordsDEVICES
dc.subject.keywordsDESIGN
dc.subject.keywordsCLAMP
dc.title

ESD nMOSFETs in Advanced Bulk FinFET Technology With Dual S/D Epitaxy

dc.typeJournal article
dspace.entity.typePublication
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