A 4.5 kV HBM, 300 V CDM, 1.2 kV HMM ESD protected DC-to-16.1 GHz wideband LNA in 90 nm CMOS

dc.contributor.author	Linten, Dimitri
dc.contributor.author	Thijs, Steven
dc.contributor.author	Okushima, Mototsugu
dc.contributor.author	Scholz, Mirko
dc.contributor.author	Borremans, Jonathan
dc.contributor.author	Dehan, Morin
dc.contributor.author	Groeseneken, Guido
dc.contributor.imecauthor	Linten, Dimitri
dc.contributor.imecauthor	Thijs, Steven
dc.contributor.imecauthor	Groeseneken, Guido
dc.contributor.orcidimec	Linten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimec	Thijs, Steven::0000-0003-2889-8345
dc.date.accessioned	2021-10-18T00:06:18Z
dc.date.available	2021-10-18T00:06:18Z
dc.date.embargo	9999-12-31
dc.date.issued	2009
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/15728
dc.source.beginpage	5A.6
dc.source.conference	31st Annual EOS/ESD Symposium
dc.source.conferencedate	30/08/2009
dc.source.conferencelocation	Anaheim, CA USA
dc.title	A 4.5 kV HBM, 300 V CDM, 1.2 kV HMM ESD protected DC-to-16.1 GHz wideband LNA in 90 nm CMOS
dc.type	Proceedings paper
dspace.entity.type	Publication
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