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Radiation induced lattice defects in InGaP/InGaAs P-HEMTs and their effect on device performance
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Radiation induced lattice defects in InGaP/InGaAs P-HEMTs and their effect on device performance
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Date
1999
Proceedings Paper
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3693.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ohyama, Hidenori
;
Simoen, Eddy
;
Kuroda, S.
;
Claeys, Cor
;
Takami, Y.
;
Hakata, T.
;
Sunaga, H.
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2079
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Acq. date: 2025-12-10
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Metrics
Views
2079
since deposited on 2021-10-14
1
last month
Acq. date: 2025-12-10
Citations