Publication:

Analytical modeling for the current-voltage characteristics of lightly-doped symmetric double-gate MOSFETs

Date

2009
Journal article
https://doi.org/10.1016/j.mee.2009.10.015
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dc.contributor.authorTsormpatzoglou, A.
dc.contributor.authorTassis, D.H
dc.contributor.authorDimitriadis, C.A.
dc.contributor.authorGhibaudo, G.
dc.contributor.authorPananakakis, G.
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-18T03:45:33Z
dc.date.available2021-10-18T03:45:33Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.doi10.1016/j.mee.2009.10.015
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16328
dc.source.beginpage1764
dc.source.endpage1768
dc.source.issue9
dc.source.journalMicroelectronic Engineering
dc.source.volume87
dc.title

Analytical modeling for the current-voltage characteristics of lightly-doped symmetric double-gate MOSFETs

dc.typeJournal article
dspace.entity.typePublication
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