Publication:

Junctionless versus inversion-mode lateral semiconductor nanowire transistors

Date

2018
Journal article
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dc.contributor.authorVeloso, Anabela
dc.contributor.authorMatagne, Philippe
dc.contributor.authorSimoen, Eddy
dc.contributor.authorKaczer, Ben
dc.contributor.authorEneman, Geert
dc.contributor.authorMertens, Hans
dc.contributor.authorYakimets, Dmitry
dc.contributor.authorParvais, Bertrand
dc.contributor.authorMocuta, Dan
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorMatagne, Philippe
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorYakimets, Dmitry
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.date.accessioned2021-10-26T08:12:35Z
dc.date.available2021-10-26T08:12:35Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.issn0953-8984
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32168
dc.identifier.urlhttp://iopscience.iop.org/article/10.1088/1361-648X/aad7c7
dc.source.beginpage384002
dc.source.issue38
dc.source.journalJournal of Physics: Condensed Matter
dc.source.volume30
dc.title

Junctionless versus inversion-mode lateral semiconductor nanowire transistors

dc.typeJournal article
dspace.entity.typePublication
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