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Formation and thermal stability of Nd0.32Y0.68Si1.7 layers formed by channeled ion beam synthesis

Date

1998
Proceedings Paper
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dc.contributor.authorWu, Ming Fang
dc.contributor.authorVantomme, Andre
dc.contributor.authorHogg, S.
dc.contributor.authorPattyn, H.
dc.contributor.authorLangouche, G.
dc.contributor.authorJin, S.
dc.contributor.authorBender, Hugo
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorBender, Hugo
dc.date.accessioned2021-10-01T09:50:19Z
dc.date.available2021-10-01T09:50:19Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3162
dc.source.beginpage191
dc.source.conferenceAdvanced Interconnects and Contact Materials and Processes for Future Integrated Circuits
dc.source.conferencedate13/04/1998
dc.source.conferencelocationSan Francisco, CA USa
dc.source.endpage196
dc.title

Formation and thermal stability of Nd0.32Y0.68Si1.7 layers formed by channeled ion beam synthesis

dc.typeProceedings paper
dspace.entity.typePublication
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