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An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

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dc.contributor.authorPosthuma, Niels
dc.contributor.authorYou, Shuzhen
dc.contributor.authorStoffels, Steve
dc.contributor.authorWellekens, Dirk
dc.contributor.authorLiang, Hu
dc.contributor.authorZhao, Ming
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorGeens, Karen
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMoens, Peter
dc.contributor.authorBanerjee, Abhishek
dc.contributor.authorZiad, Hocine
dc.contributor.authorTack, Marnix
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorMoens, Peter
dc.contributor.imecauthorBanerjee, Abhishek
dc.contributor.imecauthorZiad, Hocine
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-26T01:31:42Z
dc.date.available2021-10-26T01:31:42Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31559
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8393658/
dc.source.beginpage284
dc.source.conference30th International Symposium on Power Semiconductor Devices and ICs - ISPSD
dc.source.conferencedate13/05/2018
dc.source.conferencelocationChicago, IL USA
dc.source.endpage287
dc.title

An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

dc.typeProceedings paper
dspace.entity.typePublication
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