Publication:
AlGaN/GaN field effect transistors for power electronics – Effect of finite GaN layer thickness on thermal characteristics
Date
| dc.contributor.author | Hodges, Chris | |
| dc.contributor.author | Anaya Calvo, J. | |
| dc.contributor.author | Stoffels, Steve | |
| dc.contributor.author | Marcon, Denis | |
| dc.contributor.author | Kubal, Martin | |
| dc.contributor.imecauthor | Stoffels, Steve | |
| dc.contributor.imecauthor | Marcon, Denis | |
| dc.date.accessioned | 2021-10-21T08:18:13Z | |
| dc.date.available | 2021-10-21T08:18:13Z | |
| dc.date.issued | 2013-11 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/22494 | |
| dc.source.beginpage | 202108 | |
| dc.source.issue | 20 | |
| dc.source.journal | Applied Physics Letters | |
| dc.source.volume | 103 | |
| dc.title | AlGaN/GaN field effect transistors for power electronics – Effect of finite GaN layer thickness on thermal characteristics | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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