Publication:

Behavior of hot hole stressed SiO2/Si interface at elevated temperatures

Date

1998
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorZhang, Jenny
dc.contributor.authorAl-Kofahi, I. S.
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorGroeseneken, Guido
dc.date.accessioned2021-10-01T09:52:21Z
dc.date.available2021-10-01T09:52:21Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3169
dc.source.beginpage843
dc.source.endpage850
dc.source.issue2
dc.source.journalJournal of Applied Physics
dc.source.volume83
dc.title

Behavior of hot hole stressed SiO2/Si interface at elevated temperatures

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
2528.pdf
Size:
135.3 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Articles