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The impact of the Ge concentration in the source for vertical tunnel-FETs
Publication:
The impact of the Ge concentration in the source for vertical tunnel-FETs
Date
2015
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Martino, J.A.
;
Agopian, P.G.D.
;
Neves, F.S.
;
Vandooren, Anne
;
Rooyackers, Rita
;
Simoen, Eddy
;
Thean, Aaron
;
Claeys, Cor
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1826
since deposited on 2021-10-22
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Acq. date: 2025-11-02
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Metrics
Views
1826
since deposited on 2021-10-22
1
last week
Acq. date: 2025-11-02
Citations