Publication:

Carrier scattering induced linewidth broadening in in-situ P-doped Ge layers on Si

Date

2018
Journal article
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dc.contributor.authorSrinivasan, Ashwyn
dc.contributor.authorPorret, Clément
dc.contributor.authorPantouvaki, Marianna
dc.contributor.authorShimura, Yosuke
dc.contributor.authorGeiregat, Pieter
dc.contributor.authorLoo, Roger
dc.contributor.authorVan Campenhout, Joris
dc.contributor.authorVan Thourhout, Dries
dc.contributor.imecauthorSrinivasan, Ashwyn
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorPantouvaki, Marianna
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVan Campenhout, Joris
dc.contributor.imecauthorVan Thourhout, Dries
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.date.accessioned2021-10-26T04:32:27Z
dc.date.available2021-10-26T04:32:27Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31842
dc.identifier.urlhttps://aip.scitation.org/doi/10.1063/1.5040153
dc.source.beginpage161101
dc.source.issue16
dc.source.journalApplied Physics Letters
dc.source.volume113
dc.title

Carrier scattering induced linewidth broadening in in-situ P-doped Ge layers on Si

dc.typeJournal article
dspace.entity.typePublication
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