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Quantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristics

Date

2008
Journal article
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dc.contributor.authorCroitoru, Mihail
dc.contributor.authorGladilin, Vladimir
dc.contributor.authorFomin, Vladimir
dc.contributor.authorDevreese, Jozef
dc.contributor.authorMagnus, Wim
dc.contributor.authorSchoenmaker, Wim
dc.contributor.authorSoree, Bart
dc.contributor.imecauthorMagnus, Wim
dc.contributor.imecauthorSoree, Bart
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.date.accessioned2021-10-17T06:39:26Z
dc.date.available2021-10-17T06:39:26Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.issn0038-1098
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13571
dc.source.beginpage31
dc.source.endpage35
dc.source.issue1
dc.source.journalSolid State Communications
dc.source.volume147
dc.title

Quantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristics

dc.typeJournal article
dspace.entity.typePublication
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