Publication:

The Ge/Pd/n-GaAs ohmic contact interface studied by backside Raman spectroscopy

Date

1994
Proceedings Paper
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dc.contributor.authorWatté, J.
dc.contributor.authorSilverans, R. E.
dc.contributor.authorMünder, H.
dc.contributor.authorPalmstrøm, C. J.
dc.contributor.authorFlorez, L. T.
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorWuyts, Koen
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-09-29T12:53:10Z
dc.date.available2021-09-29T12:53:10Z
dc.date.embargo9999-12-31
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/456
dc.source.beginpage331
dc.source.conferenceAdvanced Metallization for Devices and Circuits - Science, Technology and Manufacturing III
dc.source.conferencedate04/04/1994
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage337
dc.title

The Ge/Pd/n-GaAs ohmic contact interface studied by backside Raman spectroscopy

dc.typeProceedings paper
dspace.entity.typePublication
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