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Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire

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dc.contributor.authorMohammed, A.
dc.contributor.authorTrager-Cowan, C.
dc.contributor.authorMiddleton, P. G.
dc.contributor.authorO'Donnell, K. P.
dc.contributor.authorVan der Stricht, Wim
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.date.accessioned2021-09-30T09:18:50Z
dc.date.available2021-09-30T09:18:50Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2031
dc.source.beginpage235
dc.source.conferenceMicroscopy of Semiconducting Materials 1997
dc.source.conferencedate7/04/1997
dc.source.conferencelocationOxford UK
dc.source.endpage8
dc.title

Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire

dc.typeProceedings paper
dspace.entity.typePublication
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