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P-type poly-Si/SiOx contact by aluminium-induced crystallization of amorphous silicon

 
dc.contributor.authorSharma, Rajiv
dc.contributor.authorSzlufcik, Jozef
dc.contributor.authorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.authorPoortmans, Jef
dc.contributor.imecauthorSharma, Rajiv
dc.contributor.imecauthorSzlufcik, Jozef
dc.contributor.imecauthorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecSharma, Rajiv::0000-0002-6724-1437
dc.contributor.orcidimecSivaramakrishnan Radhakrishnan, Hariharsudan::0000-0003-1963-273X
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.accessioned2021-12-09T15:23:12Z
dc.date.available2021-11-06T03:02:26Z
dc.date.available2021-12-09T15:23:12Z
dc.date.issued2022
dc.identifier.doi10.1016/j.solmat.2021.111416
dc.identifier.issn0927-0248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38392
dc.publisherELSEVIER
dc.source.issuena
dc.source.journalSOLAR ENERGY MATERIALS AND SOLAR CELLS
dc.source.numberofpages8
dc.source.volume234
dc.subject.keywordsPOLYCRYSTALLINE SILICON
dc.subject.keywordsLAYER EXCHANGE
dc.subject.keywordsSOLAR-CELLS
dc.subject.keywordsTHIN-FILM
dc.subject.keywordsSI
dc.subject.keywordsGROWTH
dc.subject.keywordsTEMPERATURE
dc.subject.keywordsTHICKNESS
dc.subject.keywordsINTERFACE
dc.title

P-type poly-Si/SiOx contact by aluminium-induced crystallization of amorphous silicon

dc.typeJournal article
dspace.entity.typePublication
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