Publication:
Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.orcid | 0000-0001-5490-0416 | |
| cris.virtual.orcid | 0000-0002-9036-8241 | |
| cris.virtual.orcid | 0000-0003-3610-3629 | |
| cris.virtual.orcid | 0000-0002-3138-708X | |
| cris.virtual.orcid | 0000-0002-9940-0260 | |
| cris.virtual.orcid | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.orcid | 0000-0002-8877-9850 | |
| cris.virtual.orcid | 0000-0003-2381-0121 | |
| cris.virtual.orcid | 0000-0001-6121-0069 | |
| cris.virtual.orcid | 0000-0002-7382-8605 | |
| cris.virtualsource.department | 9f04b13f-f81c-4d48-a5bd-0b2cb5210392 | |
| cris.virtualsource.department | b5b8437b-a909-4ee5-812e-0ce57bfdeaaf | |
| cris.virtualsource.department | edad5296-021c-45c0-b226-fc5b54f0bf52 | |
| cris.virtualsource.department | b2592186-7449-4534-aafc-90d91a0beb8a | |
| cris.virtualsource.department | 8fc98104-5797-4ad7-ab96-253e6c50458d | |
| cris.virtualsource.department | 14cffe29-a7e7-4659-914a-5fa138733d82 | |
| cris.virtualsource.department | 62920b7f-7796-4f0c-9330-257cf5e12846 | |
| cris.virtualsource.department | 29bcc975-9492-494b-8444-0fc0ec84ceaf | |
| cris.virtualsource.department | 89a91aff-dba9-4deb-bc4c-d5206f2f4e17 | |
| cris.virtualsource.department | 54f24b6a-b745-4c59-a5bc-058756e94864 | |
| cris.virtualsource.orcid | 9f04b13f-f81c-4d48-a5bd-0b2cb5210392 | |
| cris.virtualsource.orcid | b5b8437b-a909-4ee5-812e-0ce57bfdeaaf | |
| cris.virtualsource.orcid | edad5296-021c-45c0-b226-fc5b54f0bf52 | |
| cris.virtualsource.orcid | b2592186-7449-4534-aafc-90d91a0beb8a | |
| cris.virtualsource.orcid | 8fc98104-5797-4ad7-ab96-253e6c50458d | |
| cris.virtualsource.orcid | 14cffe29-a7e7-4659-914a-5fa138733d82 | |
| cris.virtualsource.orcid | 62920b7f-7796-4f0c-9330-257cf5e12846 | |
| cris.virtualsource.orcid | 29bcc975-9492-494b-8444-0fc0ec84ceaf | |
| cris.virtualsource.orcid | 89a91aff-dba9-4deb-bc4c-d5206f2f4e17 | |
| cris.virtualsource.orcid | 54f24b6a-b745-4c59-a5bc-058756e94864 | |
| dc.contributor.author | Bastos, Joao | |
| dc.contributor.author | O'Sullivan, Barry | |
| dc.contributor.author | Higashi, Yusuke | |
| dc.contributor.author | Vaisman Chasin, Adrian | |
| dc.contributor.author | Franco, Jacopo | |
| dc.contributor.author | Arimura, Hiroaki | |
| dc.contributor.author | Ganguly, Jishnu | |
| dc.contributor.author | Capogreco, Elena | |
| dc.contributor.author | Spessot, Alessio | |
| dc.contributor.author | Horiguchi, Naoto | |
| dc.contributor.imecauthor | Bastos, J. P. | |
| dc.contributor.imecauthor | O'Sullivan, B. J. | |
| dc.contributor.imecauthor | Higashi, Y. | |
| dc.contributor.imecauthor | Chasin, A. | |
| dc.contributor.imecauthor | Franco, J. | |
| dc.contributor.imecauthor | Arimura, H. | |
| dc.contributor.imecauthor | Ganguly, J. | |
| dc.contributor.imecauthor | Capogreco, E. | |
| dc.contributor.imecauthor | Spessot, A. | |
| dc.contributor.imecauthor | Horiguchi, N. | |
| dc.date.accessioned | 2024-08-16T18:28:42Z | |
| dc.date.available | 2024-08-16T18:28:42Z | |
| dc.date.issued | 2024 | |
| dc.description.wosFundingText | This work is supported by imec's industrial affiliation program on Logic and Memory devices. The authors would also like to acknowledge the productive discussions with R. Degraeve and S. Van Beek and the support of imec's fab, line and hardware teams. | |
| dc.identifier.doi | 10.1109/IRPS48228.2024.10529495 | |
| dc.identifier.eisbn | 979-8-3503-6976-2 | |
| dc.identifier.isbn | 979-8-3503-6977-9 | |
| dc.identifier.issn | 1541-7026 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/44323 | |
| dc.publisher | IEEE | |
| dc.source.conference | International Reliability Physics Symposium (IRPS) | |
| dc.source.conferencedate | APR 14-18, 2024 | |
| dc.source.conferencelocation | Grapevine | |
| dc.source.numberofpages | 7 | |
| dc.subject.keywords | OXIDE LEAKAGE CURRENTS | |
| dc.subject.keywords | OXIDATION | |
| dc.subject.keywords | REDUCTION | |
| dc.title | Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
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