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Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics

 
dc.contributor.authorBastos, Joao
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorHigashi, Yusuke
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorFranco, Jacopo
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorGanguly, Jishnu
dc.contributor.authorCapogreco, Elena
dc.contributor.authorSpessot, Alessio
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorBastos, J. P.
dc.contributor.imecauthorO'Sullivan, B. J.
dc.contributor.imecauthorHigashi, Y.
dc.contributor.imecauthorChasin, A.
dc.contributor.imecauthorFranco, J.
dc.contributor.imecauthorArimura, H.
dc.contributor.imecauthorGanguly, J.
dc.contributor.imecauthorCapogreco, E.
dc.contributor.imecauthorSpessot, A.
dc.contributor.imecauthorHoriguchi, N.
dc.date.accessioned2024-08-16T18:28:42Z
dc.date.available2024-08-16T18:28:42Z
dc.date.issued2024
dc.description.wosFundingTextThis work is supported by imec's industrial affiliation program on Logic and Memory devices. The authors would also like to acknowledge the productive discussions with R. Degraeve and S. Van Beek and the support of imec's fab, line and hardware teams.
dc.identifier.doi10.1109/IRPS48228.2024.10529495
dc.identifier.eisbn979-8-3503-6976-2
dc.identifier.isbn979-8-3503-6977-9
dc.identifier.issn1541-7026
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44323
dc.publisherIEEE
dc.source.conferenceInternational Reliability Physics Symposium (IRPS)
dc.source.conferencedateAPR 14-18, 2024
dc.source.conferencelocationGrapevine
dc.source.numberofpages7
dc.subject.keywordsOXIDE LEAKAGE CURRENTS
dc.subject.keywordsOXIDATION
dc.subject.keywordsREDUCTION
dc.title

Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics

dc.typeProceedings paper
dspace.entity.typePublication
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