Publication:

The Impact of Width Downscaling on the High-Frequency Characteristics of InGaAs Nanowire FETs

 
dc.contributor.authorHuang, P.
dc.contributor.authorLuc, Q. H.
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorKo, H. L.
dc.contributor.authorWu, J. Y.
dc.contributor.authorTran, N. A.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorChang, E. Y.
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSibaja-Hernandez, Arturo::0000-0002-2315-9028
dc.date.accessioned2022-11-16T10:00:17Z
dc.date.available2022-10-25T02:54:18Z
dc.date.available2022-11-16T10:00:17Z
dc.date.issued2022
dc.description.wosFundingTextThis work was supported in part by the "Center for the Semiconductor Technology Research" from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE), Taiwan; in part by the Ministry of Science and Technology, Taiwan, under Grant NSTC-110-2622-8-A49-008-SB, Grant NSTC-111-2622-8-A49-018-SB, and Grant NSTC-111-2634-F-A49-008; and in part by the National Chung-Shan Institute of Science and Technology under Grant NCSIST-404-V407(111).
dc.identifier.doi10.1109/JEDS.2022.3212377
dc.identifier.issn2168-6734
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40615
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage854
dc.source.endpage859
dc.source.issuena
dc.source.journalIEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
dc.source.numberofpages6
dc.source.volume10
dc.subject.keywordsVOLUME INVERSION
dc.subject.keywordsRF PERFORMANCE
dc.subject.keywordsGATE
dc.subject.keywordsEXTRACTION
dc.subject.keywordsTRANSISTORS
dc.subject.keywordsMOSCAPS
dc.title

The Impact of Width Downscaling on the High-Frequency Characteristics of InGaAs Nanowire FETs

dc.typeJournal article
dspace.entity.typePublication
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