Publication:

Lead-Free Quantum Dot Photodiodes for Next Generation Short Wave Infrared Optical Sensors

Date

2024
Proceedings Paper
https://doi.org/10.1109/iedm50854.2024.10873395
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dc.contributor.authorSong, Wenya
dc.contributor.authorHens, Zeger
dc.contributor.authorGrige, Valeriia
dc.contributor.authorSteeno, Roelof
dc.contributor.authorBai, Jing
dc.contributor.authorDeng, Yu-Hao
dc.contributor.authorKheradmand, Ezat
dc.contributor.authorRocha, Jaqueline O.
dc.contributor.authorNakonechnyi, Igor
dc.contributor.authorWalravens, Willem
dc.contributor.authorPintor Monroy, Isabel
dc.contributor.authorLieberman, Itai
dc.contributor.authorUz Zaman, Arman
dc.contributor.authorKim, Joo Hyoung
dc.contributor.authorWeydts, Tristan
dc.contributor.authorVildanova, Marina
dc.contributor.authorMalinowski, Pawel
dc.contributor.authorGuerrieri, Stefano
dc.date.accessioned2026-06-15T13:46:40Z
dc.date.available2026-06-15T13:46:40Z
dc.date.createdwos2026-03-18
dc.date.issued2024
dc.description.abstractColloidal quantum dot sensors are disrupting imaging beyond the spectral limits of silicon. In this paper, we present imagers based on InAs QDs as alternative for 1st generation Pb-based stacks. New synthesis method yields 9 nm QDs optimized for 1400 nm and solution-phase ligand exchange results in uniform 1-step coating. Initial EQE is 17.4% at 1390 nm on glass and 5.8% EQE on silicon (detectivity of 7.4×109 Jones). Using metal-oxide transport layers and>300 hour air-stability enable compatibility with fab manufacturing. These results are a starting point towards the 2nd generation quantum dot SWIR imagers.
dc.description.wosFundingTextThe Authors acknowledge SIM-Flanders for research funding SIM-ICON Q-COMIRSE, HBC.2021.0803. We thank S Faramarzi & K. Verhemeldonck for packaging and bonding.
dc.identifier.doi10.1109/iedm50854.2024.10873395
dc.identifier.issn2380-9248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/59715
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherIEEE
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedate2024-12-07
dc.source.conferencelocationSan Francisco
dc.source.journal2024 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, IEDM
dc.source.numberofpages4
dc.title

Lead-Free Quantum Dot Photodiodes for Next Generation Short Wave Infrared Optical Sensors

dc.typeProceedings paper
dspace.entity.typePublication
imec.internal.crawledAt2026-04-07
imec.internal.sourcecrawler
imec.internal.wosCreatedAt2026-04-07
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