Publication:
Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy
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1960 since deposited on 2021-10-19
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Acq. date: 2026-01-08
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1960 since deposited on 2021-10-19
4last month
1last week
Acq. date: 2026-01-08
Citations