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Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy

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1964 since deposited on 2021-10-19
4last month
Acq. date: 2026-04-27

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1964 since deposited on 2021-10-19
4last month
Acq. date: 2026-04-27

Citations