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Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy
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1954 since deposited on 2021-10-19
Acq. date: 2025-10-24
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1954 since deposited on 2021-10-19
Acq. date: 2025-10-24
Citations