Publication:

High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs

Date

2021
Journal article
https://doi.org/10.1109/TED.2021.3111144
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dc.contributor.authorMillesimo, M.
dc.contributor.authorFiegna, C.
dc.contributor.authorTallarico, A. N.
dc.contributor.authorPosthuma, Niels
dc.contributor.authorBorga, Matteo
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-12-09T10:06:44Z
dc.date.available2021-11-28T02:05:51Z
dc.date.available2021-12-09T10:06:44Z
dc.date.issued2021
dc.identifier.doi10.1109/TED.2021.3111144
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38496
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage5701
dc.source.endpage5706
dc.source.issue11
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages6
dc.source.volume68
dc.subject.keywordsDEGRADATION
dc.subject.keywordsSTATISTICS
dc.subject.keywordsIMPACT
dc.title

High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs

dc.typeJournal article
dspace.entity.typePublication
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