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Radiation damage studies of strain-engineered and high-mobility deep submicrometer MOSFETs
Publication:
Radiation damage studies of strain-engineered and high-mobility deep submicrometer MOSFETs
Date
2008
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Simoen, Eddy
;
Put, Sofie
;
Van Uffelen, Nick
;
Leroux, P.
;
Claeys, Cor
;
Ohyama, H.
;
Kulkarni, R.
;
Schrimpf, R.D.
;
Galloway, K.F.
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1960
since deposited on 2021-10-17
1
last month
Acq. date: 2025-12-08
Citations
Metrics
Views
1960
since deposited on 2021-10-17
1
last month
Acq. date: 2025-12-08
Citations