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Analog performance of SOI MOSFETs with different TiN gate electrode thickness and hHigh-k dielectrics

Date

2011
Journal article
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dc.contributor.authorGaleti, M.
dc.contributor.authorRodrigues, M.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMartino, J.A.
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-19T13:39:44Z
dc.date.available2021-10-19T13:39:44Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn1807-1953
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18939
dc.source.beginpage102
dc.source.endpage106
dc.source.issue2
dc.source.journalJournal of Integrated Circuits and Systems
dc.source.volume6
dc.title

Analog performance of SOI MOSFETs with different TiN gate electrode thickness and hHigh-k dielectrics

dc.typeJournal article
dspace.entity.typePublication
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