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An insight into the parasitic capacitances of SOI and bulk FinFET devices

Date

2009
Proceedings Paper
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dc.contributor.authorGriffoni, Alessio
dc.contributor.authorThijs, Steven
dc.contributor.authorLinten, Dimitri
dc.contributor.authorScholz, Mirko
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.accessioned2021-10-17T22:34:05Z
dc.date.available2021-10-17T22:34:05Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15398
dc.source.conference18th European Workshop on Heterostructure Technology - HETECH
dc.source.conferencedate2/11/2009
dc.source.conferencelocationUlm Germany
dc.title

An insight into the parasitic capacitances of SOI and bulk FinFET devices

dc.typeProceedings paper
dspace.entity.typePublication
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