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On the process and material sensitivities for high-k based dielectrics

Date

2010
Proceedings Paper
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dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorSwerts, Johan
dc.contributor.authorDelabie, Annelies
dc.contributor.authorNyns, Laura
dc.contributor.authorShi, Xiaoping
dc.contributor.authorTielens, Hilde
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorMenou, Nicolas
dc.contributor.authorBreuil, Laurent
dc.contributor.authorPierreux, Dieter
dc.contributor.authorMaes, Jan
dc.contributor.authorHardy, An
dc.contributor.authorVan Bael, Marlies
dc.contributor.authorJurczak, Gosia
dc.contributor.authorKittl, Jorge
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorTielens, Hilde
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorPierreux, Dieter
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorHardy, An
dc.contributor.imecauthorVan Bael, Marlies
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecVan Bael, Marlies::0000-0002-5516-7962
dc.date.accessioned2021-10-18T23:01:46Z
dc.date.available2021-10-18T23:01:46Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18175
dc.identifier.urlhttp://semiconchina.semi.org/scchina-en/ProgramsEvents/CTR_012200
dc.source.beginpage693
dc.source.conferenceChina Semiconductor Technology International Conference - CSTIC
dc.source.conferencedate18/03/2010
dc.source.conferencelocationShanghai China
dc.source.endpage698
dc.title

On the process and material sensitivities for high-k based dielectrics

dc.typeProceedings paper
dspace.entity.typePublication
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