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Au-free, high-breakdown AlGaN/GaN MISHEMTs with low leakage, high yield and robust TDDB characteristics

Date

2012
Proceedings Paper
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dc.contributor.authorLenci, Silvia
dc.contributor.authorKang, Xuanwu
dc.contributor.authorWellekens, Dirk
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorBoulay, Sanae
dc.contributor.authorStoffels, Steve
dc.contributor.authorGeens, Karen
dc.contributor.authorZahid, Mohammed
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-20T12:36:27Z
dc.date.available2021-10-20T12:36:27Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20997
dc.source.conferenceInternational Conference on Compound Semiconductor MANufacturing TECHnology - MANTECH
dc.source.conferencedate23/04/2012
dc.source.conferencelocationBoston, MA USA
dc.title

Au-free, high-breakdown AlGaN/GaN MISHEMTs with low leakage, high yield and robust TDDB characteristics

dc.typeProceedings paper
dspace.entity.typePublication
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