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Solid phase epitaxy versus random nucleation and growth in sub-20 nm wide fin field-effect transistors

Date

2007
Journal article
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dc.contributor.authorDuffy, Ray
dc.contributor.authorVan Dal, Mark
dc.contributor.authorPawlak, Bartek
dc.contributor.authorKaiser, M.
dc.contributor.authorWeemaes, R.G.R.
dc.contributor.authorDegroote, Bart
dc.contributor.authorKunnen, Eddy
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.date.accessioned2021-10-16T15:57:36Z
dc.date.available2021-10-16T15:57:36Z
dc.date.embargo9999-12-31
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12107
dc.source.beginpage241912
dc.source.issue24
dc.source.journalApplied Physics Letters
dc.source.volume90
dc.title

Solid phase epitaxy versus random nucleation and growth in sub-20 nm wide fin field-effect transistors

dc.typeJournal article
dspace.entity.typePublication
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