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Half-terahertz silicon/germanium heterojunction bipolar technologies: A TCAD based device architecture exploration

Date

2011
Journal article
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dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorYou, Shuzhen
dc.contributor.authorVan Huylenbroeck, Stefaan
dc.contributor.authorVenegas, Rafael
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorVan Huylenbroeck, Stefaan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecVan Huylenbroeck, Stefaan::0000-0001-9978-3575
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-19T18:46:44Z
dc.date.available2021-10-19T18:46:44Z
dc.date.issued2011
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19775
dc.source.beginpage72
dc.source.endpage80
dc.source.journalSolid-State Electronics
dc.source.volume65-66
dc.title

Half-terahertz silicon/germanium heterojunction bipolar technologies: A TCAD based device architecture exploration

dc.typeJournal article
dspace.entity.typePublication
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