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Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients

Date

2016
Journal article
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dc.contributor.authorHuh, Junghwan
dc.contributor.authorKim, Dong-Chul
dc.contributor.authorMunshi, A Mazid
dc.contributor.authorDheeraj, Dasa L
dc.contributor.authorJang, Doyoung
dc.contributor.authorKim, Gyu-Tae
dc.contributor.authorFimland, Bjĝrn-Ove
dc.contributor.authorWeman, Helge
dc.contributor.imecauthorJang, Doyoung
dc.date.accessioned2021-10-23T11:26:04Z
dc.date.available2021-10-23T11:26:04Z
dc.date.issued2016
dc.identifier.issn0957-4484
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26759
dc.identifier.urlhttp://iopscience.iop.org/article/10.1088/0957-4484/27/38/385703/meta
dc.source.beginpage385703
dc.source.issue38
dc.source.journalNanotechnology
dc.source.volume27
dc.title

Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients

dc.typeJournal article
dspace.entity.typePublication
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