Publication:

Demonstration of low Vt Ni-FUSI N-MOSFETs with SiON dielectrics by using a Dy2O3 cap layer

Date

2007-11
Journal article
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dc.contributor.authorYu, HongYu
dc.contributor.authorChang, Shou-Zen
dc.contributor.authorVeloso, Anabela
dc.contributor.authorLauwers, Anne
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorOnsia, Bart
dc.contributor.authorLehnen, Peer
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorBrus, Stephan
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorOnsia, Bart
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.date.accessioned2021-10-16T21:53:29Z
dc.date.available2021-10-16T21:53:29Z
dc.date.issued2007-11
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13249
dc.source.beginpage957
dc.source.endpage959
dc.source.issue11
dc.source.journalIEEE Electron Device Letters
dc.source.volume28
dc.title

Demonstration of low Vt Ni-FUSI N-MOSFETs with SiON dielectrics by using a Dy2O3 cap layer

dc.typeJournal article
dspace.entity.typePublication
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