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Precursor penetration and sealing of porous CVD SiCOH low k dielectric for atomic layer deposition of WCxNy
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Precursor penetration and sealing of porous CVD SiCOH low k dielectric for atomic layer deposition of WCxNy
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Date
2003
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Abell, Thomas
;
Shamiryan, Denis
;
Schuhmacher, Jörg
;
Besling, W.
;
Sutcliffe, V.
;
Maex, Karen
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1926
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Acq. date: 2026-01-06
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Metrics
Views
1926
since deposited on 2021-10-15
1
last month
Acq. date: 2026-01-06
Citations