Wet chemical treatment of boron doped emitters on n-type (1 0 0) c-Si prior to amorphous silicon passivation

dc.contributor.author	Meddeb, Hosny
dc.contributor.author	Bearda, Twan
dc.contributor.author	Recaman Payo, Maria
dc.contributor.author	Abdelwahab, Ibrahim
dc.contributor.author	Abdulraheem, Yaser
dc.contributor.author	Ezzaouia, H.
dc.contributor.author	Gordon, Ivan
dc.contributor.author	Szlufcik, Jozef
dc.contributor.author	Poortmans, Jef
dc.contributor.imecauthor	Recaman Payo, Maria
dc.contributor.imecauthor	Gordon, Ivan
dc.contributor.imecauthor	Szlufcik, Jozef
dc.contributor.imecauthor	Poortmans, Jef
dc.contributor.orcidimec	Gordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimec	Poortmans, Jef::0000-0003-2077-2545
dc.date.accessioned	2021-10-22T21:01:15Z
dc.date.available	2021-10-22T21:01:15Z
dc.date.issued	2015
dc.identifier.issn	0169-4332
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/25633
dc.identifier.url	http://www.sciencedirect.com/science/article/pii/S0169433214026804
dc.source.beginpage	140
dc.source.endpage	145
dc.source.journal	Applied Surface Science
dc.source.volume	328
dc.title	Wet chemical treatment of boron doped emitters on n-type (1 0 0) c-Si prior to amorphous silicon passivation
dc.type	Journal article
dspace.entity.type	Publication
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